NSVMUN5333DW1T1G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.41
Available to order
Reference Price (USD)
3,000+
$0.04584
6,000+
$0.04008
15,000+
$0.03431
30,000+
$0.03239
75,000+
$0.03047
150,000+
$0.02727
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NSVMUN5333DW1T1G by onsemi is a top-tier pre-biased BJT array designed to streamline your circuit designs. Featuring multiple transistors with pre-adjusted bias, this product reduces external component requirements and improves system efficiency. Its excellent thermal characteristics and low leakage current make it suitable for precision applications like sensor interfaces and battery management systems. onsemi's NSVMUN5333DW1T1G is trusted by engineers worldwide for its durability and performance in harsh environments. From consumer gadgets to industrial automation, this transistor array delivers consistent results every time.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Nexperia USA Inc.
PQMH13Z
Infineon Technologies
BCR10PNH6727XTSA1
Panasonic Electronic Components
UP04113G0L
Toshiba Semiconductor and Storage
RN1710,LF
Rohm Semiconductor
EMA2T2R
onsemi
NSBC123EPDXV6T1G
onsemi
MUN5316DW1T1G
onsemi
NSBC123JDP6T5G
Toshiba Semiconductor and Storage
RN1906FE,LXHF(CT
Nexperia USA Inc.