NSVMUN5338DW1T3G
onsemi
onsemi
SS SC88A DUAL BRT TRPDBN
$0.10
Available to order
Reference Price (USD)
1+
$0.10344
500+
$0.1024056
1000+
$0.1013712
1500+
$0.1003368
2000+
$0.0993024
2500+
$0.098268
Exquisite packaging
Discount
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Introducing onsemi's NSVMUN5338DW1T3G, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. onsemi's dedication to excellence ensures that the NSVMUN5338DW1T3G meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms, 47kOhms
- Resistor - Emitter Base (R2): 10kOhms, 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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