NTBGS2D5N06C
onsemi
onsemi
POWER MOSFET, 60 V, 2.5 M?, 224
$6.60
Available to order
Reference Price (USD)
1+
$6.60000
500+
$6.534
1000+
$6.468
1500+
$6.402
2000+
$6.336
2500+
$6.27
Exquisite packaging
Discount
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Optimize your power electronics with the NTBGS2D5N06C single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTBGS2D5N06C combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
- Vgs(th) (Max) @ Id: 4V @ 175µA
- Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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