NTD3817N-1G
onsemi
onsemi
MOSFET N-CH 16V 7.6A/34.5A IPAK
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTD3817N-1G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NTD3817N-1G for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Vishay Siliconix
SIHG14N50D-GE3
Infineon Technologies
AUIRFS6535TRL
Diodes Incorporated
DMN3150L-7
Texas Instruments
CSD25483F4
Diodes Incorporated
DMTH6016LFDFW-7
Infineon Technologies
IRFS7434TRLPBF
NXP USA Inc.
BUK761R8-30C,118
Fairchild Semiconductor
HUF76107D3ST
Alpha & Omega Semiconductor Inc.
AOD5T40P
Vishay General Semiconductor - Diodes Division