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NTD4809NH-1G

onsemi
NTD4809NH-1G Preview
onsemi
MOSFET N-CH 30V 9.6A/58A IPAK
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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