NTD4810NH-1G
onsemi
onsemi
MOSFET N-CH 30V 9A/54A IPAK
$0.14
Available to order
Reference Price (USD)
1+
$0.14000
500+
$0.1386
1000+
$0.1372
1500+
$0.1358
2000+
$0.1344
2500+
$0.133
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the NTD4810NH-1G single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTD4810NH-1G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Linear Integrated Systems, Inc.
SST211 SOT-143 4L
STMicroelectronics
STW50N65DM2AG
IXYS
IXFP56N30X3
Infineon Technologies
BSC018NE2LSIATMA1
onsemi
NTMFS5C456NLT1G
Rohm Semiconductor
RD3U080AAFRATL
Rectron USA
RM100N60T2
Vishay Siliconix
SQ3410EV-T1_GE3
Nexperia USA Inc.
PSMN025-80YLX
Infineon Technologies