NTD5C434NT4G
onsemi
onsemi
MOSFET N-CH 40V 33A/160A DPAK
$2.32
Available to order
Reference Price (USD)
2,500+
$1.96598
5,000+
$1.89207
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the NTD5C434NT4G by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NTD5C434NT4G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 4.7W (Ta), 120W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Harris Corporation
RFD20N03
Infineon Technologies
AUIRF3805L
Vishay Siliconix
SIR800DP-T1-GE3
Nexperia USA Inc.
PMPB16R5XNEX
Nexperia USA Inc.
PSMN027-100BS,118
Fairchild Semiconductor
IRFW740BTM
Renesas Electronics America Inc
NP82N055NUG-S18-AY
Diodes Incorporated
DMP3050LVT-7
Infineon Technologies
IPA50R950CE
Infineon Technologies