NTE103A
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 1A TO1
$7.65
Available to order
Reference Price (USD)
1+
$7.65000
500+
$7.5735
1000+
$7.497
1500+
$7.4205
2000+
$7.344
2500+
$7.2675
Exquisite packaging
Discount
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Enhance your circuit designs with the NTE103A Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE103A is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: 170mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 25µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 69 @ 300mA, 0V
- Power - Max: 650 mW
- Frequency - Transition: -
- Operating Temperature: 90°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-1-3 Metal Can
- Supplier Device Package: TO-1
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