NTE104
NTE Electronics, Inc

NTE Electronics, Inc
TRANS PNP 35V 10A TO3
$25.62
Available to order
Reference Price (USD)
1+
$25.62000
500+
$25.3638
1000+
$25.1076
1500+
$24.8514
2000+
$24.5952
2500+
$24.339
Exquisite packaging
Discount
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Discover the NTE104 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NTE104 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 35 V
- Vce Saturation (Max) @ Ib, Ic: 290mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 1mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 2V
- Power - Max: 90 W
- Frequency - Transition: 300kHz
- Operating Temperature: 100°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3