NTE108-1
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 15V 600MHZ TO106
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
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Enhance your RF designs with the NTE108-1, a high-efficiency Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The NTE108-1 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust NTE Electronics, Inc for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 6dB @ 60MHz
- Gain: 15dB
- Power - Max: 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-106-3 Domed
- Supplier Device Package: TO-106
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