NTE123
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 40V 0.8A TO39
$1.80
Available to order
Reference Price (USD)
1+
$1.80000
500+
$1.782
1000+
$1.764
1500+
$1.746
2000+
$1.728
2500+
$1.71
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE123 by NTE Electronics, Inc is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the NTE123 ensures efficient and stable operation. Backed by NTE Electronics, Inc's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
Related Products
Nexperia USA Inc.
BC817-16QBH-QZ
Rohm Semiconductor
2SA1797T100P
Harris Corporation
TIP47
NXP USA Inc.
2PB1219AQ,115
NTE Electronics, Inc
MJ2955
Infineon Technologies
BCP55E6327
onsemi
SBCX19LT1G
onsemi
FJP13007H2TU
onsemi
KSP13TA
Infineon Technologies