NTE123A-10
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 40V 0.8A TO18 10PK
$14.40
Available to order
Reference Price (USD)
1+
$14.40000
500+
$14.256
1000+
$14.112
1500+
$13.968
2000+
$13.824
2500+
$13.68
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE123A-10 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE123A-10 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.2 W
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
Related Products
Rohm Semiconductor
2SA1576U3T106R
onsemi
MJD210RL
Micro Commercial Co
PZTA42-TP
Microchip Technology
JANKCB2N2907A
onsemi
2SD1801T-TL-E
onsemi
BCP54
onsemi
BD242BG
onsemi
2SD1725S
onsemi
BD17516STU
Nexperia USA Inc.