NTE128P
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 80V 1A TO237
$3.19
Available to order
Reference Price (USD)
1+
$3.19000
500+
$3.1581
1000+
$3.1262
1500+
$3.0943
2000+
$3.0624
2500+
$3.0305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE128P from NTE Electronics, Inc is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the NTE128P ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of NTE128P and enhance your electronic projects with this top-quality component from NTE Electronics, Inc.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 350mA, 2V
- Power - Max: 850 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-237AA
- Supplier Device Package: TO-237
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