NTE131MP
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 32V 1A TO66
$13.08
Available to order
Reference Price (USD)
1+
$13.08000
500+
$12.9492
1000+
$12.8184
1500+
$12.6876
2000+
$12.5568
2500+
$12.426
Exquisite packaging
Discount
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Enhance your circuit designs with the NTE131MP Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE131MP is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 36 @ 1A, 0V
- Power - Max: 6 W
- Frequency - Transition: -
- Operating Temperature: 90°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
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