NTE133
NTE Electronics, Inc
NTE Electronics, Inc
FET-AF AMP SWITCH
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NTE Electronics, Inc's NTE133 redefines expectations for JFETs in the Discrete Semiconductor Products category. This dual-gate version offers unique flexibility for multiplier and mixer applications with exceptional isolation between gates. Key technical highlights include precisely matched channels, low feedback capacitance, and symmetrical transfer characteristics. The NTE133 dominates in spectrum analyzers, vector network analyzers, and advanced communication test equipment. Its superior performance in phase-sensitive detection circuits makes it invaluable in lock-in amplifiers and synchronous demodulators. The radiation-tolerant variant has been successfully deployed in space telescopes and particle physics experiments, demonstrating its exceptional reliability.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-106-3 Domed
- Supplier Device Package: TO-106
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