NTE16001
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 35V 0.05A 3SIP
$1.18
Available to order
Reference Price (USD)
1+
$1.18000
500+
$1.1682
1000+
$1.1564
1500+
$1.1446
2000+
$1.1328
2500+
$1.121
Exquisite packaging
Discount
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Experience unmatched performance with the NTE16001 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NTE16001 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 35 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
- Power - Max: 600 mW
- Frequency - Transition: 500MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: 3-SIP
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