NTE16007
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 55V 3A TO8
$72.80
Available to order
Reference Price (USD)
1+
$72.80000
500+
$72.072
1000+
$71.344
1500+
$70.616
2000+
$69.888
2500+
$69.16
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE16007 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE16007 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 55 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 40mA, 750mA
- Current - Collector Cutoff (Max): 15µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 750mA, 4V
- Power - Max: 25 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-233AA, TO-8-3 Metal Can
- Supplier Device Package: TO-8
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