NTE2018
NTE Electronics, Inc
NTE Electronics, Inc
IC-8 CHAN CMOS/TTL DR 18-PIN DIP
$3.81
Available to order
Reference Price (USD)
1+
$3.81000
500+
$3.7719
1000+
$3.7338
1500+
$3.6957
2000+
$3.6576
2500+
$3.6195
Exquisite packaging
Discount
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Meet the NTE2018 NTE Electronics, Inc s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the NTE2018 demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 350mA, 500A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-PDIP
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