NTE213
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 60V 30A TO36
$58.80
Available to order
Reference Price (USD)
1+
$58.80000
500+
$58.212
1000+
$57.624
1500+
$57.036
2000+
$56.448
2500+
$55.86
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE213 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the NTE213 is a reliable component for demanding applications. NTE Electronics, Inc's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2A, 25A
- Current - Collector Cutoff (Max): 4mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 2V
- Power - Max: 170 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 110°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-36 (2 Leads + Case)
- Supplier Device Package: TO-36
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