NTE215
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 100V 8A TO3P
$4.60
Available to order
Reference Price (USD)
1+
$4.60000
500+
$4.554
1000+
$4.508
1500+
$4.462
2000+
$4.416
2500+
$4.37
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NTE215 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NTE215 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
- Power - Max: 2.5 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
onsemi
BC337-25ZL1G
Rohm Semiconductor
2SCR574D3TL1
Rohm Semiconductor
2SA2029FHAT2LR
Diotec Semiconductor
BC817K-40
onsemi
NJV4030PT3G
onsemi
2N4125RLRM
Diodes Incorporated
BC848AW-7-F
Fairchild Semiconductor
BC548BBU
Nexperia USA Inc.
2PC4081S,135
Nexperia USA Inc.