NTE218
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 80V 4A TO3
$5.46
Available to order
Reference Price (USD)
1+
$5.46000
500+
$5.4054
1000+
$5.3508
1500+
$5.2962
2000+
$5.2416
2500+
$5.187
Exquisite packaging
Discount
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The NTE218 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE218 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
- Power - Max: 25 W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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