NTE222
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CHANNEL 25V 50MA TO72
$13.54
Available to order
Reference Price (USD)
1+
$13.54000
500+
$13.4046
1000+
$13.2692
1500+
$13.1338
2000+
$12.9984
2500+
$12.863
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE222 from NTE Electronics, Inc sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to NTE Electronics, Inc's NTE222 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 1.2mW (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-72
- Package / Case: TO-206AF, TO-72-4 Metal Can
Related Products
Infineon Technologies
IPP65R110CFDAAKSA1
Fairchild Semiconductor
FDB8453LZ
Vishay Siliconix
IRFP350LCPBF
Sanyo
NTMFS4C50NT1G
Texas Instruments
CSD18543Q3A
Microchip Technology
APT34M60S
onsemi
NTMFS6H800NT1G
Vishay Siliconix
SQJ488EP-T1_BE3
Taiwan Semiconductor Corporation
TSM170N06CP ROG
Fairchild Semiconductor