NTE226
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 35V 2A TO66
$4.55
Available to order
Reference Price (USD)
1+
$4.55000
500+
$4.5045
1000+
$4.459
1500+
$4.4135
2000+
$4.368
2500+
$4.3225
Exquisite packaging
Discount
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The NTE226 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE226 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 35 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 200µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 200mA, 1.5V
- Power - Max: 12 W
- Frequency - Transition: -
- Operating Temperature: 85°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
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