NTE226MP
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 35V 2A TO66
$11.03
Available to order
Reference Price (USD)
1+
$11.03000
500+
$10.9197
1000+
$10.8094
1500+
$10.6991
2000+
$10.5888
2500+
$10.4785
Exquisite packaging
Discount
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Upgrade your electronic designs with the NTE226MP Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NTE226MP is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NTE Electronics, Inc for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 35 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 200µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 200mA, 1.5V
- Power - Max: 12 W
- Frequency - Transition: -
- Operating Temperature: 85°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
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