NTE2309
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 800V 12A TO3P
$6.79
Available to order
Reference Price (USD)
1+
$6.79000
500+
$6.7221
1000+
$6.6542
1500+
$6.5863
2000+
$6.5184
2500+
$6.4505
Exquisite packaging
Discount
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Enhance your circuit designs with the NTE2309 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE2309 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 800 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 600mA, 3A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V
- Power - Max: 2.5 W
- Frequency - Transition: 15MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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