NTE2310
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 450V 8A TO218
$8.59
Available to order
Reference Price (USD)
1+
$8.59000
500+
$8.5041
1000+
$8.4182
1500+
$8.3323
2000+
$8.2464
2500+
$8.1605
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE2310 from NTE Electronics, Inc is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the NTE2310 is a reliable choice for both commercial and industrial use. Trust NTE Electronics, Inc to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
Related Products
Panjit International Inc.
MMBTA56_R1_00001
onsemi
MPS2907RLRM
onsemi
NSVMSB92T1G
Diodes Incorporated
DCP53-13
onsemi
MPSW05G
onsemi
BC639-16ZL1G
Nexperia USA Inc.
BF824W,135
Nexperia USA Inc.
PBSS5350TVL
Renesas Electronics America Inc
UPA2001C-A
onsemi