NTE2317
NTE Electronics, Inc

NTE Electronics, Inc
TRANS NPN DARL 450V 15A TO3PN
$6.42
Available to order
Reference Price (USD)
1+
$6.42000
500+
$6.3558
1000+
$6.2916
1500+
$6.2274
2000+
$6.1632
2500+
$6.099
Exquisite packaging
Discount
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Enhance your circuit designs with the NTE2317 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE2317 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 150mA, 8A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
- Power - Max: 105 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN