NTE2318
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 700V 8A TO218
$8.75
Available to order
Reference Price (USD)
1+
$8.75000
500+
$8.6625
1000+
$8.575
1500+
$8.4875
2000+
$8.4
2500+
$8.3125
Exquisite packaging
Discount
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Enhance your circuit designs with the NTE2318 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE2318 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 700 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 4.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2.25 @ 4.5A, 5V
- Power - Max: 125 W
- Frequency - Transition: 7MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
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