NTE2344
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 120V 12A TO220
$2.15
Available to order
Reference Price (USD)
1+
$2.15000
500+
$2.1285
1000+
$2.107
1500+
$2.0855
2000+
$2.064
2500+
$2.0425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the NTE2344 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NTE2344 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
Diodes Incorporated
FMMT617TC
onsemi
MJ21194G
Rohm Semiconductor
2SD1484KT146Q
NXP Semiconductors
BF570,215
Microchip Technology
JAN2N2484UB
NXP USA Inc.
2PD601AR,115
onsemi
2SA1519-TB-E
onsemi
NJD2873T4G
Central Semiconductor Corp
CXT3019 TR PBFREE
onsemi