NTE2345
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 120V 6A SOT82
$3.59
Available to order
Reference Price (USD)
1+
$3.59000
500+
$3.5541
1000+
$3.5182
1500+
$3.4823
2000+
$3.4464
2500+
$3.4105
Exquisite packaging
Discount
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The NTE2345 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE2345 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Power - Max: 60 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SOT-82
- Supplier Device Package: SOT-82
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