NTE236
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 25V TO220
$12.07
Available to order
Reference Price (USD)
1+
$12.07000
500+
$11.9493
1000+
$11.8286
1500+
$11.7079
2000+
$11.5872
2500+
$11.4665
Exquisite packaging
Discount
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Discover the NTE236, a premium RF Bipolar Junction Transistor (BJT) by NTE Electronics, Inc, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The NTE236 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose NTE Electronics, Inc for cutting-edge RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 12dB
- Power - Max: 1.7W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 12V
- Current - Collector (Ic) (Max): 6A
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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