NTE250
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 100V 16A TO3
$8.50
Available to order
Reference Price (USD)
1+
$8.50000
500+
$8.415
1000+
$8.33
1500+
$8.245
2000+
$8.16
2500+
$8.075
Exquisite packaging
Discount
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The NTE250 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the NTE250 is a reliable component for demanding applications. NTE Electronics, Inc's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 16 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 16A
- Current - Collector Cutoff (Max): 3mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 10A, 3V
- Power - Max: 150 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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