NTE2501
NTE Electronics, Inc

NTE Electronics, Inc
RF TRANS NPN 300V 70MHZ TO126
$2.26
Available to order
Reference Price (USD)
1+
$2.26000
500+
$2.2374
1000+
$2.2148
1500+
$2.1922
2000+
$2.1696
2500+
$2.147
Exquisite packaging
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Enhance your RF designs with the NTE2501, a high-efficiency Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The NTE2501 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust NTE Electronics, Inc for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 300V
- Frequency - Transition: 70MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126