NTE251
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 100V 20A TO3
$8.73
Available to order
Reference Price (USD)
1+
$8.73000
500+
$8.6427
1000+
$8.5554
1500+
$8.4681
2000+
$8.3808
2500+
$8.2935
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE251 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE251 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
- Power - Max: 160 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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