NTE253
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 80V 4A TO126
$1.40
Available to order
Reference Price (USD)
1+
$1.40000
500+
$1.386
1000+
$1.372
1500+
$1.358
2000+
$1.344
2500+
$1.33
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE253 by NTE Electronics, Inc is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the NTE253 ensures efficient and stable operation. Backed by NTE Electronics, Inc's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
Nexperia USA Inc.
2PB1424,115
NXP USA Inc.
2PB709AR,115
Microchip Technology
JANS2N5152L
Diodes Incorporated
FCX591TA
Diodes Incorporated
ZXTN4004KTC
onsemi
KSE44H11
Rohm Semiconductor
2SB1705TL
NTE Electronics, Inc
NTE2542
Microchip Technology
JANTXV2N6648
onsemi