NTE2547
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 100V 8A TO220
$1.43
Available to order
Reference Price (USD)
1+
$1.43000
500+
$1.4157
1000+
$1.4014
1500+
$1.3871
2000+
$1.3728
2500+
$1.3585
Exquisite packaging
Discount
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Experience unmatched performance with the NTE2547 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NTE2547 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
- Power - Max: 2 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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