NTE2550
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 400V 10A TO220
$9.48
Available to order
Reference Price (USD)
1+
$9.48000
500+
$9.3852
1000+
$9.2904
1500+
$9.1956
2000+
$9.1008
2500+
$9.006
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE2550 from NTE Electronics, Inc is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the NTE2550 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of NTE2550 and enhance your electronic projects with this top-quality component from NTE Electronics, Inc.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 70mA, 7A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 7A, 2V
- Power - Max: 50 W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
STMicroelectronics
STX93003
onsemi
30A02CH-TL-E
NXP Semiconductors
PMST2222,115
Diodes Incorporated
ZTX657STZ
onsemi
2SA2016-TD-E
Nexperia USA Inc.
BC807-40QCH-QZ
onsemi
NJVMJD44E3T4G
Microchip Technology
JANTXV2N2906A
onsemi
2SC4519-6-TB-E
Fairchild Semiconductor