NTE266
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 50V 0.5A TO202
$7.64
Available to order
Reference Price (USD)
1+
$7.64000
500+
$7.5636
1000+
$7.4872
1500+
$7.4108
2000+
$7.3344
2500+
$7.258
Exquisite packaging
Discount
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The NTE266 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the NTE266 is a reliable component for demanding applications. NTE Electronics, Inc's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40000 @ 200mA, 5V
- Power - Max: 1.33 W
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
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