NTE275
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 80V 4A TO66
$5.40
Available to order
Reference Price (USD)
1+
$5.40000
500+
$5.346
1000+
$5.292
1500+
$5.238
2000+
$5.184
2500+
$5.13
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the NTE275 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NTE275 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NTE Electronics, Inc for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 50 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
Related Products
Diodes Incorporated
MMBTA28-7-F
NTE Electronics, Inc
NTE31
Infineon Technologies
BCW66KGE6327HTSA1
Microchip Technology
JANTX2N2218A
Central Semiconductor Corp
2N5878 PBFREE
Nexperia USA Inc.
BSR43,115
NXP USA Inc.
PDTB113EU135
Nexperia USA Inc.
BC847A,215
Rohm Semiconductor
2SD1834T100
Central Semiconductor Corp