NTE291
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 120V 4A TO220
$1.98
Available to order
Reference Price (USD)
1+
$1.98000
500+
$1.9602
1000+
$1.9404
1500+
$1.9206
2000+
$1.9008
2500+
$1.881
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE291 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE291 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 4A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.5A, 4V
- Power - Max: 1.8 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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