NTE2932
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CH 200V 21.3A TO3PML
$7.93
Available to order
Reference Price (USD)
1+
$7.93000
500+
$7.8507
1000+
$7.7714
1500+
$7.6921
2000+
$7.6128
2500+
$7.5335
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE2932 single MOSFET from NTE Electronics, Inc is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the NTE2932 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PML
- Package / Case: TO-3P-3 Full Pack
Related Products
Nexperia USA Inc.
BUK7277-55A,118
Vishay Siliconix
SQ2389ES-T1_GE3
onsemi
NVH4L040N65S3F
Panjit International Inc.
PJQ4444P-AU_R2_000A1
Diodes Incorporated
DMN2056U-7
Infineon Technologies
IPB180N04S401ATMA1
Infineon Technologies
IPP129N10NF2SAKMA1
onsemi
3LN01M-TL-E
STMicroelectronics
STF4N90K5
onsemi