NTE2960
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET-N-CHAN ENHANCEMENT
$8.63
Available to order
Reference Price (USD)
1+
$8.63000
500+
$8.5437
1000+
$8.4574
1500+
$8.3711
2000+
$8.2848
2500+
$8.1985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE2960 by NTE Electronics, Inc is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the NTE2960 provides reliable operation under stringent conditions. NTE Electronics, Inc's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
- Power - Max: 40W
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220 Full Pack
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