NTE2973
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET-N-CHAN ENHANCEMENT TO-3P
$14.64
Available to order
Reference Price (USD)
1+
$14.64000
500+
$14.4936
1000+
$14.3472
1500+
$14.2008
2000+
$14.0544
2500+
$13.908
Exquisite packaging
Discount
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Optimize your power electronics with the NTE2973 single MOSFET from NTE Electronics, Inc. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTE2973 combines cutting-edge technology with NTE Electronics, Inc's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 275W (Tc)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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