NTE306
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 50V 1.5A TO202
$3.80
Available to order
Reference Price (USD)
1+
$3.80000
500+
$3.762
1000+
$3.724
1500+
$3.686
2000+
$3.648
2500+
$3.61
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NTE306 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NTE306 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 200nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 98 @ 100mA, 2V
- Power - Max: 950 mW
- Frequency - Transition: -
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
Related Products
Sanyo
2SD1207S-AE
onsemi
KSD560RTSTU
Diodes Incorporated
BC857BLP4-7B
Nexperia USA Inc.
PMST5551,115
STMicroelectronics
STR2550
Linear Integrated Systems, Inc.
LS3250SC TO-92 3L
Fairchild Semiconductor
BD437S
onsemi
2SA1593S-TL-E
Nexperia USA Inc.
BCW71,215
Fairchild Semiconductor