NTE375
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 150V 2A TO220
$2.02
Available to order
Reference Price (USD)
1+
$2.02000
500+
$1.9998
1000+
$1.9796
1500+
$1.9594
2000+
$1.9392
2500+
$1.919
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the NTE375 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NTE375 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100mA, 1A
- Current - Collector Cutoff (Max): 1mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 1.75 W
- Frequency - Transition: 8MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
Diodes Incorporated
BCV49TA
Microchip Technology
JANSP2N2369AUA/TR
onsemi
2SC2274KE-AA
NTE Electronics, Inc
2N6727
Micro Commercial Co
BC817-25-TP
Toshiba Semiconductor and Storage
TTC4116FU,LF
onsemi
2SB1140T
onsemi
NSS60201LT1G
Nexperia USA Inc.
BC807-25LVL
Fairchild Semiconductor