NTE384
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 350V 7A TO66
$5.33
Available to order
Reference Price (USD)
1+
$5.33000
500+
$5.2767
1000+
$5.2234
1500+
$5.1701
2000+
$5.1168
2500+
$5.0635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE384 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE384 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 4A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 1.2A, 1V
- Power - Max: 45 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
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