NTE389
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 750V 4A TO3
$10.01
Available to order
Reference Price (USD)
1+
$10.01000
500+
$9.9099
1000+
$9.8098
1500+
$9.7097
2000+
$9.6096
2500+
$9.5095
Exquisite packaging
Discount
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Experience unmatched performance with the NTE389 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NTE389 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 1.2A, 3A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 100 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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