NTE55
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS PNP 150V 30MHZ TO220
$4.80
Available to order
Reference Price (USD)
1+
$4.80000
500+
$4.752
1000+
$4.704
1500+
$4.656
2000+
$4.608
2500+
$4.56
Exquisite packaging
Discount
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The NTE55 RF Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the NTE55 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NTE Electronics, Inc for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 150V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
- Current - Collector (Ic) (Max): 8A
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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