NTE55MCP
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS PNP 30MHZ TO220 PAIR
$10.97
Available to order
Reference Price (USD)
1+
$10.97000
500+
$10.8603
1000+
$10.7506
1500+
$10.6409
2000+
$10.5312
2500+
$10.4215
Exquisite packaging
Discount
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Introducing the NTE55MCP, a high-performance RF Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The NTE55MCP features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on NTE Electronics, Inc for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 150V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
- Current - Collector (Ic) (Max): 8A
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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