NTE88MCP
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 250V 10A TO3
$21.33
Available to order
Reference Price (USD)
1+
$21.33000
500+
$21.1167
1000+
$20.9034
1500+
$20.6901
2000+
$20.4768
2500+
$20.2635
Exquisite packaging
Discount
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Enhance your circuit designs with the NTE88MCP Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE88MCP is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 250 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 400mA, 4A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 2V
- Power - Max: 200 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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